2SD2142

www.DataSheet4U.com 2SD2142 NPN Plastic Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Elektronische Bauelemente SOT-23 3.COLLECTOR FEATURES z Darlington connection for a high hFE z High input impedance MARKING：R1M Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1.BASE 2.EMITTER A L 3 1 Top View 2 B S V G C D H K J All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 40 32 12 300 o Units V V V mA mW o 200 -55~150 C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN 40 32 12 0.1 0.1 5000 1.4 200 2.5 V MHz pF TYP MAX UNIT V V V μA μA IC=100μA,IE=0 IC=10mA,IB=0 IE=100μA,IC=0 VCB=30V,IE=0 VEB=12V,IC=0 VCE=3V,IC=100mA IC=200mA,IB=0.2mA VCE=5V,IC=10mA,f=100MHz VCB=10V,IE=0,f=1MHz http://www.SeCoSGmbH.com Any changing...