2SD2524

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 20 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2524 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 2A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 hFE DC Current Gain IC= 6A; VCE= 5V VECF C-E Diode Forward Voltage IF= 8A fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V Resistive Load ts Storage Time tf Fall Time IC= 6A, IB(end)= 2A, Lleak= 5μH 2SD2524 MIN TYP. MAX UNIT 5 V 3.0 V 1.5 V 50 μA 1.0...