isc Silicon NPN Power Transistor
2SD897
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed...
isc Silicon
NPN Power
Transistor
2SD897
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 1A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
1.5
A
ICM
Collector Current- Peak
5.0
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
0.8
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5 ℃/W
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 2A
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
IC= 0.8A, IB1(end)= 0...