2SC2248

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 40 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2248 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2248 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 50mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V hFE DC Current Gain ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= 3A; VCE= 5V VCB= 450V; IE= 0 TC=125℃ VCE= 400V; IB= 0 10 1.0 4.0 mA 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA Switching Times tr Rise Time tstg Storage Time IC=3A; IB1=- IB2= 0.6A 1.0 μs 2.0 μs tf Fall Time 1.0 μs NOTICE： ISC rese...