isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2481
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC2481
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High Current Capability ·High Collector Power Dissipation ·Complement to Type 2SA1021 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV vertical deflection output applications. ·Color TV class B sound output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1.5
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
1.0
A
20 W
1.2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 5mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 0.2A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
hFE Classifications
R
O
Y
...