2SC2510A
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2510A
2~30MHz SSB LINEAR POWER AM...
2SC2510A
www.DataSheet4U.com
TOSHIBA
TRANSISTOR SILICON
NPN EPITAXIAL PLANAR TYPE
2SC2510A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 28V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min.) : Gp = 12.2dB (Min.) : ηC = 35% (Min.)
Intermodulation Distortion : IMD = −30dB (Max.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 60 60 35 4 20 250 175 −65~175 UNIT V V V V A W °C °C
JEDEC EIAJ TOSHIBA Weight: 5.2g
— — 2−13B1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
MARKING
TOSHIBA
JAPAN
2SC2510
Dot Lot No.
1
2007-11-01
2SC2510A
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CH...