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2SC3356F
NPN Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Pro...
www.DataSheet4U.com
2SC3356F
NPN Silicon Plastic Encapsulated
Transistor
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES
Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 2
Emitter
A
3
L
3
Collector
3
Top View
1 2
C B
1 2
K
E D
1
MARKING
R = hFE Coding
Base
F
G
Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40
H
J
REF. A B C D E F
REF. G H J K L
Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Ratings
20 12 3 0.1 200 150, -55~150
Unit
V V V A mW °C
ELECTRICAL CHARACTERISTICS
Parameter
Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance
(TA = 25°C unless otherwise noted)
Symbol
BVCBO BVCEO ICBO IEBO hFE* fT NF
Min.
20 12 50 -
Typ.
7 -
Max.
1 1 250 2
Unit
V V μA μA GHz dB
Test Conditions
IC=10μA, IE=0 IC= 1mA, IB=0 VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC= 20mA VCE=10V, IC= 20mA VCE=10V, IC= 7mA, f = 1GHz
*pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2%
CLASSIFICATION OF hFE
Rank
Coding Range Marking
Q
23 50 - 100 R23
R
24 80 - ...