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2SC3550
Power Transistor
Description
isc Silicon
NPN
Power
Transistor
2SC3550 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching
regulator
s ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifier...
Inchange Semiconductor
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