isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V (Min) ·High Sw...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching and horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
3
A
150
W
175
℃
Tstg
Storage Temperature Range
-65~175
℃
2SC3719
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
hFE
DC Current Gain
IC= 2A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 1000V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 2A; IB1= 0.4A; IB2= -0.8A; VCC= 250V
2SC3719
MIN TYP. MAX UNIT
800
V
1.5
V
2.0
V
6
20
0.1 mA
0.1 mA
1.0 μs 3.5 μs 0.3 μs
NOT...