2SC3736

www.DataSheet4U.com SMD Type NPN Silicon Epitaxia 2SC3736 Transistors Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipation Junction temperature Storage temperature * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 80 45 5 1 2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 45V, IE=0 VEB = 4V, IC=0 VCE = 10V , IC = 50mA 60 0.17 0.9 300 380 6.7 20 IC = 500mA , IB1 = IB2 = 50mA 55 72 10 40 80 100 Min Typ Max 0.5 0.5 200 0.4 1.2 V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = 500mA , IB = 50mA VBE(sat) IC = 500mA , IB = 50mA fT Cob ton tstg toff VCE = 10V , IE = -100mA VCB = 10V , IE = 0, f = 1.0MHz hFE Classification Marking hFE OL 60 120 OK 100 200 www.kexin.com.cn 1 ...