2SC3884

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A ICM Collector Current- Peak 12 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3884 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A ICBO Collector Cutoff Current VCB= 1400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz Switching Times , Resistive load tstg Storage Time tf Fall Time ICP= 4A, IB1= 0.8A; IB2= -1.6A; RL= 50Ω 2SC3884 ...