Bi-Directional N-Channel 30-V (D-S) MOSFET
SiF912EDZ
www.DataSheet4U.com
Vishay Siliconix
Bi-Directional N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(...
Description
SiF912EDZ
www.DataSheet4U.com
Vishay Siliconix
Bi-Directional N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.019 @ VGS = 4.5 V 30 0.0195 @ VGS = 4.0 V 0.022 @ VGS = 3.1 V 0.027 @ VGS = 2.5 V
FEATURES
ID (A)
10.7 10.5 9.9 9.0
D TrenchFETr Power MOSFET: 2.5-V Rated D ESD Protected: 3000 V
APPLICATIONS
D Battery Protection Circuitry D 1-Cell Li-Ion Battery Pack − LiB/LiP − Lithium-Polymer
D1
D2
PowerPAKr 2 x 5
1 2 S1 S1 3 6 S2 5 S2 4 G2 2.6 kW G1 G1 G2 2.6 kW
Marking Code MCXYZ MC: Part # Code XYZ: Lot Traceability and Date Code S1 S2
Ordering Information: SiF912EDZ-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (VGS = 8 V) Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30
Steady State
Unit
V
"12 10.7 7.7 80 2.9 3.5 1.8 −55 to 150 1.3 1.6 0.86 7.4 5.3
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72952 S-50131—Rev. B, 24-Jan-05 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
30 61 4.5
Maximum
36 76 5.6
Unit
_C/W
1
SiF912EDZ
www.DataSheet4U.com
Vishay Siliconix
SPECIFICATIONS (TJ ...
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