AS27C010A Datasheet PDF


Part Number

AS27C010A

Description

1 MEG UVEPROM UV Erasable Programmable Read-Only Memory

Manufacture

Austin Semiconductor

Total Page 11 Pages
PDF Download
Download AS27C010A Datasheet PDF


Features Datasheet pdf UVEPROM Austin Semiconductor, Inc. 1 MEG UVEPROM UV Erasable Programmable Read- Only Memory AVAILABLE AS MILITARY SPECI FICATIONS • SMD 5962-89614 • MIL-ST D-883 SMJ27C010A AS27C010A PIN ASSIGN MENT (Top View) 32-Pin DIP (J) (600 MIL ) V PP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 1 0 11 12 13 14 15 16 32 31 30 29 28 27 2 6 25 24 23 22 21 20 19 18 17 Vcc PGM NC A14 A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 FEATURES • Organized 131,072 x 8 • Single +5V ±10% power supply • Operationally compatible with exist ing megabit EPROMs • Industry standar d 32-pin ceramic dual-in-line package All inputs/outputs fully TTL compati ble • 8-bit output for use in microprocessor-based .
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AS27C010A Datasheet
Austin Semiconductor, Inc.
UVEPROM
SMJ27C010A
AS27C010A
1 MEG UVEPROM
UV Erasable Programmable
PIN ASSIGNMENT
(Top View)
Read-Only Memory
AVAILABLE AS MILITARY
32-Pin DIP (J)
(600 MIL)
SPECIFICATIONS
• SMD 5962-89614
• MIL-STD-883
FEATURES
• Organized 131,072 x 8
• Single +5V ±10% power supply
• Operationally compatible with existing megabit EPROMs
• Industry standard 32-pin ceramic dual-in-line package
• All inputs/outputs fully TTL compatible
• 8-bit output for use in microprocessor-based systems
• Very high-speed SNAP! Pulse Programming
• Power-saving CMOS technology
• 3-state output buffers
• 400mV minimum DC noise immunity with standard
TTL loads
• Latchup immunity of 250 mA on all input and output pins
• No pullup resistors required
• Low power dissipation (Vcc = 5.5V)
3Active - 165 mW Worst Case
3Standby - 0.55 mW Worst Case (CMOS-input levels)
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 Vcc
31 PGM\
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 G\
23 A10
22 E\
21 DQ7
20 DQ6
19 DQ5
18 DQ4
17 DQ3
Pin Name
Function
A0 - A18 Address Inputs
DA0-DQ7 Inputs (programming)/Outputs
E\ Chip Enable
G\ Output Enable
GND Ground
PGM\ Program
VCC 5V Supply
VPP 13V Power Supply*
*Only in program mode.
GENERAL DESCRIPTION
OPTIONS
• Timing
www.Data1S2h0enest4Uac.ccoemss
150ns access
200ns access
MARKING
-12
-15
-20
• Package(s)
Ceramic DIP (600mils)
J or ECA No. 114
• Operating Temperature Ranges
Military (-55oC to +125oC) M
For more products and information
please visit our web site at
www.austinsemiconductor.com
The SMJ27C010A series are 131072 by 8-bit (1048576-
bit), ultaviolet (UV) light erasable, electrically programmable
read-only memories (EPROMs).
These devices are fabricated using power-saving CMOS
technology for high speed and simple interface with MOS and
bipolar circuits. All inputs (including program data inputs)
can be driven by Series 54 TTL circuits without the use of
external pullup resistors. Each output can drive one Series 54
TTL circuit without external resistors.
The SMJ27C010A EPROM is offered in a ceramic
dual-in-line package (J suffix) designed for insertion in
mounting-hole rows on 15.2mm (600mil) centers.
These EPROMs operate from a single 5V supply (in the
read mode), and therefore, are ideal for use in
microprocessor-based systems. One other 13V supply is
needed for programming. All programming signals are TTL
level. These devices are programmable using the SNAP! Pulse
programming algorithm. The SNAP! Pulse programming
algorithm uses a VPP of 13V and a VCC of 6.5V for a nominal
programming time of thirteen seconds. For programming
outside the system, existing EPROM programmers can be
used. Locations can be programmed singly, in blocks, or at
random.
SMJ27C010A
AS27C010A
Rev. 2.1 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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