128K x 8 EEPROM EEPROM Memory
EEPROM
Austin Semiconductor, Inc. 128K x 8 EEPROM
EEPROM Memory 5 Volt, Byte Alterable
AVAILABLE AS MILITARY SPECIFICATI...
Description
EEPROM
Austin Semiconductor, Inc. 128K x 8 EEPROM
EEPROM Memory 5 Volt, Byte Alterable
AVAILABLE AS MILITARY SPECIFICATIONS
SMD 5962-38267 z MIL-PRF-38535
z
AS28C010
PIN ASSIGNMENT (Top View)
32-Pin CFP (F), 32-Pin CerDIP (CW)
NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc WE\ NC A14 A13 A8 A9 A11 OE\ A10 CE\ I/O 7 I/O 6 I/O 5 I/O 4 I/O 3
FEATURES
Access speed: 120, 150, 200, and 250ns Data Retention: 100 Years z Low power, active current: 50mA, standby current: 500uA z Single +5V (+10%) power supply z Data Polling and Toggle z Erase/Write Endurance (10,000 byte mode / 100,000 page mode) z Software Data protection Algorithm z Automatic , Self-Timed Byte Write z Automatic Programming: Automatic Page Write: 10ms (MAX)
z z
OPTIONS
z
MARKINGS
-12 -15 -20 -25 F CW XT IT 883C
Timing 120ns access 150ns access 200ns access 250ns access z Packages Ceramic Flat Pack CerDIP, 600 mil www.DataSheet4U.com z Operating Temperature Ranges -Military (-55oC to +125oC) -Industrial (-40oC to +85oC) -Full Military Class M Processing
*NOTE: Package lid is connected to ground (Vss).
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. The AS28C010 achieves high speed access, low power consum...
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