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AS8FLC1M32

Austin Semiconductor

3.0Volt Boot Block FLASH Array

AUSTIN SEMICONDUCTOR, INC. Austin Semiconductor, Inc. Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Bloc...


Austin Semiconductor

AS8FLC1M32

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Description
AUSTIN SEMICONDUCTOR, INC. Austin Semiconductor, Inc. Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array Available via Applicable Specifications: MIL-PRF-38534, Class H I/O0 I/O1 I/02 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/012 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 AS8FLC1M32 FLASH FIGURE 1: PIN ASSIGNMENT (Top View) RESET\ A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 VCC 09 08 07 06 05 04 03 02 01 68 67 66 65 64 63 62 61 60 59 78 57 76 55 54 53 52 51 50 49 FEATURES 32Mb device, total density, organized as 1M x 32 Bottom Boot Block (Sector) Architecture Operation with single 3.0V Supply Available in multiple Access time variations Individual byte control via individual byte selects (CSx\) Low Power CMOS Minimum 1,000,000 Program/Erase Cycles per sector guaranteed Sector Architecture: One 16K byte, two 8K byte, one 32K byte and fifteen 64Kbyte sectors Any combination of sectors can be concurrently erased MCM supports full array (multi-chip) Erase Embedded Erase and Program Algorithms Erase Suspend/Resume; Supports reading data from or programming data to a sector not being Erased TTL Compatible Inputs and Outputs Military and Industrial operating temperature ranges [Package Designator QT] 48 47 46 45 44 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 39 40 41 42 I/O8...




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