IRFS4615PBF

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID D 150V 34.5m: 42m: 33A D S G G D S D2Pak IRFS4615PbF TO-262 IRFSL4615PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Max. 33 24 140 144 0.96 ± 20 38 -55 to + 175 300 Units A W W/°C V V/ns IDM www.DataSheet4U.com Pulsed Drain Current c e °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c d c i 109 See Fig. 14, 15, 22a, 22b, mJ A mJ Thermal Resistance Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) j Parameter Typ. ––– ––– Max. 1.045 40 Units °C/W www.irf.com 1 12/18/08 IRFS/SL4615PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ ...