Si5920DC

New Product Si5920DC Vishay Siliconix Dual N-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.032 at VGS = 4.5 V 8 0.036 at VGS = 2.5 V 0.045 at VGS = 1.8 V 0.054 at VGS = 1.5 V ID (A) 4a 4a 4a 4a 7.3 nC Qg (Typ) FEATURES TrenchFET® Power MOSFET: 1.5 V Rated Ultra -low on-resistance in compact, thermally enhanced ChipFET® package RoHS COMPLIANT APPLICATIONS Load switch for portable applications - Guaranteed operation at VGS = 1.5 V critical for opti mized design and space savings 1206-8 ChipFET® (Dual) 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 D2 Marking Code CD XXX Part # Code G1 Lot Traceability and Date Code S1 N-Channel MOSFET G2 Bottom View S2 N-Channel MOSFET Ordering Information: Si5920DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e Symbol VDS VGS ID IDM IS Limit 8 ±5 4a 4a 4a 4a 25 2.6 1.7c 3.12 2.0 2.04b, c 1.3b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) www.DataSheet4U.com Pulsed Drain Current Continuous Source-Drain Diode Current A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t ≤ 5 sec 50 60 Maximum Junction-to-Ambientb, f °C/W RthJF 30 40 Maximu...