Si8461DB

www.vishay.com Si8461DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.100 at VGS = -4.5 V 0.118 at VGS = -2.5 V 0.140 at VGS = -1.8 V 0.205 at VGS = -1.5 V ID (A) a, e -3.7 -3.4 -3.1 -2 Qg (TYP.) 9.5 nC MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D 1 mm Backside View Bump Side View Marking Code: xxxx = 8461 xxx = Date / lot traceability code Ordering Information: Si8461DB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES TrenchFET® power MOSFET Ultra small 1 mm x 1 mm maximum outline Ultra-thin 0.548 mm maximum height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load switch Battery switch Charger switch S G P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Package Reflow Conditions c VPR IR/Convection VDS VGS ID IDM IS PD TJ, Tstg LIMIT -20 ±8 -3.7 a -3 a -2.5 b -1.9 b -20 -1.5 a -0.65 b 1.8 a 1.1 a 0.78 b 0.5 b -55 to +150 260 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient f, g Maximum Junction-t...