SEMICONDUCTOR
TECHNICAL DATA
KTX211U
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
SWITCHING APPLICATION. INTERFACE CIRCUIT AND ...
SEMICONDUCTOR
TECHNICAL DATA
KTX211U
EPITAXIAL PLANAR
PNP/
NPN TRANSISTOR
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES Including two devices in US6. (Ultra Super mini type with 6 leads.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 C
Q2
OUT
B
R1 IN
Q2 R1=2.2KΩ
R2=2.2KΩ
R2
E COMMON
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1 Q2
12 3
Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
* Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Output Voltage Input Voltage Output Current
Q1, Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Power Dissipation Junction Temperature Storage Temperature Range * Total Raing.
SYMBOL VCBO VCEO VEBO IC ICP *
SYMBOL VO VI IO
SYMBOL PD * Tj Tstg
A A1 CC
B B1
1 6 DIM MILLIMETERS A 2.00+_ 0.20
2 5 A1 1.3+_ 0.1 B 2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9+_ 0.1
T T 0.15+0.1/-0.05
G
1. Q1 (EMITTER)
2. Q1 (BASE) 3. Q2 OUT (COLLECTOR) 4. Q2 COMMON (EMITTER) 5. Q2 IN (BASE) 6. Q1 (COLLECTOR)
H
Marking
US6
654
BFType Name
Lot No.
123
RATING -15 -12 -6 -500 -1
UNIT V V V
RATING 50
12, -10 100
RATING 200 150
-55 150
UNIT V V
UNIT
2008. 9. 23
Revision No : 2
1/4
KTX211U
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Collector-Base Breakdo...