KTX213E

SEMICONDUCTOR TECHNICAL DATA KTX213E EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 leads.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT Q1 C Q2 OUT B R1 IN Q2 R1=47KΩ R2=47KΩ R2 E COMMON EQUIVALENT CIRCUIT (TOP VIEW) 654 Q1 Q2 123 Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current * Single pulse Pw=1mS. Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Output Voltage Input Voltage Output Current Q1, Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL VCBO VCEO VEBO IC ICP * SYMBOL VO VI IO SYMBOL PD * Tj Tstg A A1 CC B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 A1 1.0+_ 0.05 2 5 B 1.6 +_0.05 B1 1.2+_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 J 0.12+_ 0.05 P P P5 JD H 1. Q1 (EMITTER) 2. Q1 (BASE) 3. Q2 OUT (COLLECTOR) 4. Q2 COMMON (EMITTER) 5. Q2 IN (BASE) 6. Q1 (COLLECTOR) Marking TES6 654 BHType Name Lot No. 123 RATING -15 -12 -6 -500 -1 UNIT V V V RATING 50 40, -10 100 RATING 200 150 -55 150 UNIT V V UNIT 2008. 9. 23 Revision No : 1 1/4 KTX213E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdow...