KTX215U

SEMICONDUCTOR TECHNICAL DATA KTX215U EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES Including two devices in US6. (Ultra Super mini type with 6 leads.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT Q1 C Q2 OUT B R1 IN Q2 R1=10KΩ R2=10KΩ R2 E COMMON EQUIVALENT CIRCUIT (TOP VIEW) 65 4 Q1 Q2 A A1 CC H B B1 1 6 DIM MILLIMETERS A 2.00+_ 0.20 2 5 A1 1.3+_ 0.1 B 2.1+_ 0.1 3 4 D B1 1.25+_ 0.1 C 0.65 D 0.2+0.10/-0.05 G 0-0.1 H 0.9+_ 0.1 T T 0.15+0.1/-0.05 G 1. Q1 (EMITTER) 2. Q1 (BASE) 3. Q2 OUT (COLLECTOR) 4. Q2 COMMON (EMITTER) 5. Q2 IN (BASE) 6. Q1 (COLLECTOR) US6 Marking 6 5 4 BJType Name Lot No. Q1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ) Collector Current * Single pulse Pw=1mS. Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Output Voltage Input Voltage Output Current Q1, Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. ) 12 3 SYMBOL VCBO VCEO VEBO IC ICP * SYMBOL VO VI IO SYMBOL PD * Tj Tstg 123 RATING -15 -12 -6 -500 -1 UNIT V V V RATING 50 30, -10 100 RATING 200 150 -55 150 UNIT V V UNIT 2008. 9. 23 Revision No : 1 1/4 KTX215U Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Bas...