RT2N63M

RT2N63M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION RT2N63M is a composite transistor with built-in bias resistor ① 2.1 1.25 ⑤ 0.2 0.13 ④ RTr2 0～0.1 R1 ② ③ Unit:mm FEATURE 0.65 2.0 0.65 ●Built-in bias resistor ( R1=4.7 KΩ) ●Mini package for easy mounting ② ③ ④ APPLICATION muting circuit、switching circuit 0.9 0.65 ⑤ RTr1 R1 ① TERMINAL CONNECTOR ①：BASE１ ②：EMITTER（COMMON） ③：BASE２ ④：COLLECTOR２ ⑤：COLLECTOR１ JEITA：－ JEDEC：－ MAXIMUM RATINGS Symbol VCBO VEBO VCEO I C （Ta=25℃）（RTr1、RTr2） Parameter Ratings 40 40 20 400 150 ＋150 -55～＋150 Unit V V V mA mW ℃ ℃ MARKING ⑤ ④ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Total Ta=25℃） Junction temperature Storage temperature PC Tj Tstg N６３ ２ ① ② ③ www.DataSheet4U.com ISAHAYA ELECTRONICS CORPORATION RT2N63M Composite Transistor For Muting Application Silicon NPN Epitaxial Type Electrical characteristics（Ta=25℃） Symbol VCBO VEBO VCEO ICBO IEBO ｈＦＥ VCE(sat) R1 fT Ron Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Input resistance Transition frequency Output On-resistance V CE Test conditions ＩC=50μA , IE=0mA IE=50μA , C=0mA IC=1mA , RBE=∞ VCB=40V , IE=0mA VEB=40V , IC=0mA VCE=5V , IC=-10mA IC=10mA , IB=0.5mA =10V, I E=-10mA, f=100MH...