Si8451DB

P-Channel 1.5-V Rated MOSFET Si8451DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.080 at VGS = - 4.5 V - 20 0.100 at VGS = - 2.5 V 0.126 at VGS = - 1.8 V 0.200 at VGS = - 1.5 V ID (A)e - 10.8 - 9.7 - 3.0 - 1.2 Qg (Typ.) 7.7 nC MICRO FOOT Bump Side View Backside View FEATURES TrenchFET® Power MOSFET APPLICATIONS Portable Devices - Battery Management - Low Threshold Load Switch - Battery Protection S G 2 1 S 8451 XXX S S 3 6 G D D 4 5 Device Marking: 8451 xxx = Date/Lot Traceability Code D Ordering Information: Si8451DB-T2-E1 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 TC = 25 °C - 10.8 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 8.7 - 5.0a, b TA = 70 °C - 4.0a, b Pulsed Drain Current IDM - 15 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS - 10.8 - 2.3a, b TC = 25 °C 13 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 8.4 2.77a, b TA = 70 °C 1.77a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Package Reflow Conditionsc IR/Convection 260 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 °C. Doc...