PD 91735A
IRG4RC10K
INSULATED GATE BIPOLAR TRANSISTOR
Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-252AA package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
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