IRG4RC10SD

PD-91678B IRG4RC10SD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack IGBT Features C Extremely low voltage drop 1.1V(typ) @ 2A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. Tight parameter distribution IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-252AA package G E n-channel VCES = 600V VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A Benefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Lower losses than MOSFET's conduction and Diode losses D-PAK TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VG...