SIR414DP

New Product SiR414DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0028 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a 50 50 Qg (Typ.) 38 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm Synchronous Rectification Secondary Side DC/DC D G Bottom View Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Temperature)d, e Symbol VDS VGS ID Limit 40 ± 20 50a 50a 33b, c 26b, c 70 50a 4.9b, c 40 80 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f t ≤ 10 s Steady State Maximum °C/W Maximum Junction-to-Case (Drain) Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?64727). The Pow...