N-Channel MOSFET
New Product
SiR438DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 25 RDS(on) (Ω) 0.0018 at VGS...
Description
New Product
SiR438DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 25 RDS(on) (Ω) 0.0018 at VGS = 10 V 0.0023 at VGS = 4.5 V ID (A)a, g 60 60 Qg (Typ.) 32.6 nC
FEATURES
Halogen-free According to IEC 61249-2-21 TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested
PowerPAK® SO-8
APPLICATIONS
Server - Low Side
6.15 mm
S 1 2 3 S S
5.15 mm D
G 4
D 8 7 6 5 D D D
G
Bottom View Ordering Information: SiR438DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 25 ± 20 60a, g 60 40b, c 32b, c 80 60a, g 4.9b, c 50 125 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
IDM IS IAS EAS PD
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W
Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder ...
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