SIR470DP

New Product SiR470DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0023 at VGS = 10 V 0.00265 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 45.5 nC FEATURES Halogen-free TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT PowerPAK® SO-8 APPLICATIONS Secondary Side Synchronous Rectification Power Supply 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR470DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 40 ± 20 60a 60a 38.8b, c 31b, c 100 60a 5.6b, c 50 125 104 66.6 6.25b, c 4.0b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Maximum Junction-to-Case (Drain) Junction-to-Ambientb, f t ≤ 10 s Steady State Symbol RthJA RthJC Typical 15 0.9 Maximum 20 1.2 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10...