SI1056X

N-Channel 20 V (D-S) MOSFET Si1056X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.089 at VGS = 4.5 V 20 0.098 at VGS = 2.5 V 0.121 at VGS = 1.8 V ID (A) 1.32 1.26 1.13 Qg (Typ.) 5.2 SC-89 (6-LEADS) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices D1 D2 G3 6D 5D 4S Marking Code YY S XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1056X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TA = 25 °C IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 20 ±8 1.32b, c 1.05b, c 6 8 3.2 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 5 s Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 73895 S10-2542-Rev. D, 08-Nov-10 www.v...