NDF06N60Z

NDF06N60Z Power MOSFET, N-Channel, 600 V, 1.2 W Features Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Continuous Drain Current, RqJC (Note 1) Continuous Drain Current TA = 100°C, RqJC (Note 1) VDSS 600 V ID 7.1 A ID 4.5 A Pulsed Drain Current, VGS @ 10 V IDM 28 A Power Dissipation, RqJC PD Gate−to−Source Voltage VGS Single Pulse Avalanche Energy, L = 6.3 mH, EAS ID = 6.0 A 35 W ±30 V 113 mJ ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Vesd 3000 V VISO 4500 V Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 6.0 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C www.onsemi.com VDSS (@ TJmax) 650 V RDS(ON) (MAX) @ 3 A 1.2 Ω N−Channel D (2) G (1) S (3) 1 2 3 NDF06N60ZG, NDF06N60ZH TO−220FP CASE 221...