NDP06N60Z

NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 600 V http://onsemi.com RDS(ON) (TYP) @ 3 A 0.98 Ω Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, L = 6.3 mH, ID = 6.0 A ESD (HBM) (JESD 22−114−B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 31 ±30 113 NDF06N60Z NDP06N60Z Unit V A A A 113 W V mJ 600 (Note 1) 6.0 (Note 2) 3.8 (Note 2) 20 (Note 2) N−Channel D (2) G (1) TO−220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM Vesd VISO 4500 3000 − V V TO−220AB CASE 221A STYLE 5 NDF06N60ZG or NDP06N60ZG AYWW Gate Source dv/dt IS TL 4.5 (Note 3) 6.0 300 260 V/ns A °C Drain TPKG A Y WW G = Location Code = Year = Work Week = Pb−Free Package TJ, Tstg − 55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Function...