2STR1160

2STR1160 Low voltage fast-switching NPN power transistor Datasheet - production data SOT-23 Figure 1: Internal schematic diagram Features  Very low collector-emitter saturation voltage  High current gain characteristic  Fast switching speed  Miniature SOT-23 plastic package for surface mounting circuits Description The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STR2160. Applications  LED  Battery charger  Motor and relay driver  Voltage regulation Table 1: Device summary Order code Marking Package Packing 2STR1160 1160 SOT-23 Tape and reel April 2015 DocID14430 Rev 3 This is information on a product in full production. 1/9 www.st.com Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum rating Parameter VCBO VCEO VEBO ...