Thin WL-CSP MOSFET
FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
July 2009
FDZ371PZ
P-Channel 1.5 V Specified PowerT...
Description
FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
July 2009
FDZ371PZ
P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET
-20 V, -3.7 A, 75 mΩ
Features
Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A Occupies only 1.0 mm2 of PCB area.Less than 30% of the area of 2 x 2 BGA Ultra-thin package: less than 0.4 mm height when mounted to PCB HBM ESD protection level >4.4kV typical (Note 3) RoHS Compliant
®
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General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
Applications
Battery management Load switch Battery protection
Pin 1 S D G S
Pin 1
BOTTOM WL-CSP 1.0X1.0 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 1a) (Note 1b) TA = 25°C (Note 1a) Ratings -20 ±8 -3.7 -12 1.7 0.5 -55 to +150 Units V V A W °C
Operating and Storage Junction Temperatu...
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