STB36NM60N

STB36NM60N N-channel 600 V, 0.98 Ω , 25 A, MDmesh™ II Power MOSFET in D2PAK Preliminary data Features Type STB36NM60N ■ ■ ■ VDSS @ TJmax 600V RDS(on) max <0.105Ω ID 32A PW 250W 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 3 1 Application ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 36NM60N Package D²PAK Packaging Tape and reel Order codes STB36NM60N www.DataSheet4U.com August 2009 Doc ID 16099 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STB36NM60N Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . ...