AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09030E is a high-voltage, gold-met...
AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power
transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 30 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09030EU AGR09030EF Sym R R
JC JC
Value 1.85 2.2
Unit °C/W °C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09030EU AGR09030EF Derate Above 25 ° C: AGR09030EU AGR09030EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, +15 ID 4.25 PD PD — — TJ 95 80 0.54 0.45 200 Unit Vdc Vdc Adc W W W/°C W/°C °C
AGR09030EU (unflanged)
AGR09030EF (flanged)
Figure 1. Available Packages
TSTG –65, +150 °C
www.DataSheet4U.com
Features
Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, tra...
