AGR09070EF
Introduction
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Table 1. Thermal Characteristics Parame...
AGR09070EF
Introduction
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09070EF Sym Value Unit
The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power
transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 70 W, it is ideally suited for today's wireless base station RF power amplifier applications.
R
JC
0.80
°C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09070EF Derate Above 25 C: AGR09070EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, +15 ID 8.5 PD — TJ 219 1.25 200 Unit Vdc Vdc Adc W W/°C °C
TSTG –65, +150 °C
Figure 1. AGR09070EF (flanged) Package
Features
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* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet...
