AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09085E is a high-voltage, laterall...
AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power
transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, reliability, and best-in-class thermal resistance. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 85 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR09085EU AGR09085EF Sym Value Unit
R
JC
0.7 0.7
°C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR09085EU AGR09085EF Derate Above 25 C: AGR09085EU AGR09085EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, 15 ID 8.5 PD 250 250 1.43 1.43 200 Unit Vdc Vdc Adc W
W/°C °C °C
YLE 1
TJ
06, STYLE 1
AGR09085EU (unflanged)
AGR09085EF (flanged)
TSTG –65, 150
Figure 1. Available Packages
www.DataSheet4U.com
Features
Typical performance ratings are for IS-95 CDMA, pi...
