AGR18060E

AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and singlecarrier or multicarrier class AB power amplifier applications. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 60 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR18060EU AGR18060EF Sym Value 1.00 1.00 Unit °C/W °C/W Rı JC Rı JC Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR18060EU AGR18060EF Derate Above 25 ˇ C: AGR18060EU AGR18060EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS –0.5, 15 Vdc PD PD — — TJ 175 175 1.00 1.00 200 W W W/°C W/°C °C °C AGR18060EU AGR18060EF Figure 1. Available Packages Features Typical EDGE performance: 1880 MHz, 26 V, IDQ = 500 mA — Output power (POUT): 20 W. — Power gain: 15 dB. www.DataSheet4U.com — Efficiency: 34%. — Modulation spectrum: @ ±400 kHz = –62 dBc. @ ±600 kHz = –73 dBc. — Error vector magnitude (EVM) = 2%. Typical performance over entire GSM band: — P1dB: 60 W typ. — Power gain: @ P1dB = 14 dB. — Efficiency @ P1dB ...