AGR18090E

Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industry-standard package and is capable of delivering a typical output power of 90 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR18090EU AGR18090EF Sym Rı JC Rı JC Value 0.75 0.75 Unit °C/W °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Total Dissipation at TC = 25 °C: AGR18090EU AGR18090EF Derate Above 25 ˇ C: AGR18090EU AGR18090EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, 15 ID 8.5 PD PD — — TJ 230 230 1.31 1.31 200 Unit Vdc Vdc Adc W W W/°C W/°C °C °C AGR18090EU AGR18090EF Figure 1. Available Packages Features Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 30 W): — Modulation spectrum: www.DataSheet4U.com @ ±400 kHz = –63 dBc. @ ±600 kHz = –73 dBc. — Error vector magnitude (EVM) = 1.7...