DatasheetsPDF.com

AGR19125E Dataheets PDF



Part Number AGR19125E
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description Transistor
Datasheet AGR19125E DatasheetAGR19125E Datasheet (PDF)

AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19125EU AGR19125EF Sy.

  AGR19125E   AGR19125E



Document
AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19125EU AGR19125EF Sym Rı JC Rı JC Value 0.5 0.5 Unit °C/W °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR19125EU AGR19125EF Derate Above 25 ° C: AGR19125EU AGR19125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit 65 Vdc VDSS VGS –0.5, +15 Vdc PD PD — — TJ 350 350 2.0 2.0 200 W W W/°C W/°C °C AGR19125EU (unflanged) AGR19125EF (flanged) Figure 1. Available Packages Features Typical 2 carrier, N-CDMA performance for VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz, F2 = 1961.25 MHz, IS-95 (pilot, paging, sync, traffic channels 8—13) 1.2288 MHz channel bandwidth (BW). Adjacent channels measured www.DataSheet4U.com over a 30 kHz BW at F1 – 0.885 MHz and F2 + 0.885 MHz. Intermodulation distortion products measured over a 1.2288 MHz BW at F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average (P/A) = 9.72 dB at 0.01% probability on CCDF: — Output power: 24 W. — Power gain: 15 dB. — Efficiency: 24%. — ACPR: –48 dBc. — IMD3: –34 dBc. — Return loss: –10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W continuous wave (CW) output power. Large signal impedance parameters available. TSTG –65, +150 °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR19125E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM),.


AGR19090E AGR19125E AGR19180EF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)