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AGR19180EF Dataheets PDF



Part Number AGR19180EF
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description Transistor
Datasheet AGR19180EF DatasheetAGR19180EF Datasheet (PDF)

AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Device Perfo.

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AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Device Performance Features High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output power pulsed 4 µs at 10% duty. Large signal impedance parameters available. ESD Rating* AGR19180EF HBM MM CDM Minimum (V) 500 50 1000 Class 1B A 4 375D–03, STYLE 1 Figure 1. AGR19180EF (flanged) Package www.DataSheet4U.com CDMA Features Typical two carrier CDMA performance: VDD = 28 V, IDQ = 1600 mA, POUT = 38 W, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97 CDMA pilot, sync, paging, traffic codes 8—13 (9 channels) 1.2288 MHz channel bandwidth (BW), adjacent channel power ration (ACPR) measured over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz. Distortion products measured over 1.2288 MHz channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz. Peak/avg = 9.72 dB @ 0.01% probability on CCDF: — Output power: 38 W. — Power gain: 14.5 dB. — Efficiency: 26%. — IM3: –33 dBc. — ACPR: –48.5 dBc — Return loss: –12 dB. * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs both a human-body model (HBM) and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114 (HBM) and JESD22-C101 (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C Derate Above 25 °C Operating Junction Temperature Storage Temperature Range Symbol VDSS VGS PD — TJ TSTG Value 65 –0.5, 15 500 3 200 –65, 150 U nit Vdc Vdc W W/°C °C °C Symbol RθJC Value 0.35 U nit °C/W * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 3. dc Characteristics Symbol Off Characteristics 300 µA) V(BR)DSS Drain-source Breakdown Voltage (VGS = 0, ID = 400 Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS IDSS Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics GFS Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 600 µA) VGS(TH) VGS(Q) Gate Quiescent Voltage (VDS = 28 V, ID = 2 x 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) VDS(ON) www.DataSheet4U.com Parameter Min 65 — — — — — — Typ — — — 12 — 3.8 0.08 Max — 6 18 200 — 3.0 — — Unit Vdc µAdc µAdc S Vdc Vdc Vdc AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Electrical Characateristics (continued) Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min Typ Max Unit — 4.0 — pF CRSS Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (Part is internally matched both on input and output.) Supplied Test Fixture) Functional Tests (in (in Agere Systems Supplied Test Fixture) Common-source Amplifier Power Gain GPS — 14.5 — dB (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) η — 26 — % Drain Efficiency (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) IM3 — –33 — dBc Third-order Intermodulation Distortion* (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration bandwidth centered at f1 – 2..


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