AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21090E is a high-voltage, gold...
AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power
transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Rı JC Rı JC Value 0.7 0.7 Unit °C/W °C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21090EU AGR21090EF Derate Above 25 ˇ C: AGR21090EU AGR21090EF CW RF Input Power (VDS = 31 V) Operating Junction Temperature Storage Temperature Range Sym Value Unit 65 Vdc VDSS VGS –0.5, 15 Vdc PD PD — — — TJ 250 250 1.4 1.4 30 200 W W W/°C W/°C W °C °C
AGR21090EU (unflanged)
AGR21090EF (flanged)
Figure 1. Available Packages
Features
Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 – 5 MHz and F2 + 5 MHz. Third-order distortion is measured www.DataSheet4U.com over 3.84 MHz BW at F1 – 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: — Output power: 19 W. — Power gain: 14.5 dB. — Efficiency: 26%. — IM3: –33 dBc. — ACPR: –36 dBc. — Return loss: –12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) ...
