AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21125E is a high-voltage, gol...
AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power
transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
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Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21125EU AGR21125EF Sym Rı JC Rı JC Value 0.5 0.5 Unit °C/W °C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21125EU AGR21125EF Derate Above 25 ˇ C: AGR21125EU AGR21125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS –0.5, +15 Vdc PD PD — — TJ 350 350 2.0 2.0 200 W W W/°C W/°C °C
AGR21125EU (unflanged)
AGR21125EF (flanged)
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Figure 1. Available Packages
Features
Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 – 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 – 10 MHz and www.DataSheet4U.com F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: — Output power: 28 W. — Power gain: 14 dB. — Efficiency: 27%. — IM3: –34.5 dBc. — ACPR: –38 dBc. — Return loss: –10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias d...
