AGR26180EF

Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.35 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C Derate Above 25 ° C Operating Junction Temperature Storage Temperature Range Sym Value 65 VDSS VGS –0.5, +15 PD 500 — TJ 3 200 Unit Vdc Vdc W W/°C °C °C 375D–03, STYLE 1 Figure 1. AGR26180EF Flanged Package TSTG –65, +150 Features Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1700 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF*: — Output power: 27 W. www.DataSheet4U.com — Power gain: 12.5 dB. — Efficiency: 20%. — ACPR: –33 dBc. — ACLR1: –35 dBc. — Return loss: –12 dB. Typical pulsed P1dB, 6 µs pulse at 10% duty: 185 W. High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. ...