TGF2021-04

Advance Product Information September 19, 2005 DC - 12 GHz Discrete power pHEMT TGF2021-04 Key Features and Performance Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 300-500mA (Under RF Drive, Id rises from 300mA to 960mA) Chip Dimensions: 0.57 x 1.30 x 0.10 mm (0.022 x 0.051 x 0.004 in) Product Description The TriQuint TGF2021-04 is a discrete 4 mm pHEMT which operates from DC-12 GHz. The TGF2021-04 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2021-04 typically provides saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-04 appropriate for high efficiency applications. The TGF2021-04 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2021-04 has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Primary Applications 35 30 Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications www.DataSheet4U.com > 36 dBm of Maximum Gain (dB) 25 20 15 10 5 0 0 2 4 MSG MAG 6 8 10 12 14 16 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change w...