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TGF2022-24

TriQuint Semiconductor

DC - 20 GHz Discrete power pHEMT

Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT • • • • • • • • TGF2022-24 Key Featur...


TriQuint Semiconductor

TGF2022-24

File Download Download TGF2022-24 Datasheet


Description
Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-24 Key Features and Performance Frequency Range: DC - 20 GHz > 34 dBm Nominal Psat 58% Maximum PAE 42 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 2.4mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 180-300mA (Under RF Drive, Id rises from 180mA to 600mA) Chip Dimensions: 0.57 x 1.30 x 0.10 mm (0.022 x 0.051 x 0.004 in) Product Description The TriQuint TGF2022-24 is a discrete 2.4 mm pHEMT which operates from DC-20 GHz. The TGF2022-24 is designed using TriQuint’s proven standard 0.35um power pHEMT production process. The TGF2022-24 typically provides > 34 dBm of saturated output power with www.DataSheet4U.com power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-24 appropriate for high efficiency applications. The TGF2022-24 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-24 has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Primary Applications 35 30 Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications Maximum Gain (dB) 25 MSG 20 MAG 15 10 5 0 0 2 4 6 8 10 12 14 16 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are s...




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