Power-Transistor. IPB80N04S2-H4 Datasheet

IPB80N04S2-H4 Datasheet PDF


Part

IPB80N04S2-H4

Description

Power-Transistor

Manufacture

Infineon Technologies

Page 8 Pages
Datasheet
Download IPB80N04S2-H4 Datasheet


IPB80N04S2-H4 Datasheet
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
3.7 m
80 A
PG-TO220-3-1
PG-TO262-3-1
Type
IPB80N04S2-H4
IPP80N04S2-H4
IPI80N04S2-0H4
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Ordering Code Marking
SP0002-18165 2N04H4
SP0002-18169 2N04H4
SP0002-18171 2N04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
www.DataSheet4U.com
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=80A
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
660
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-02

IPB80N04S2-H4 Datasheet
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.5 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
www.DatGaSahteee-st4oUu.crocme leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=80 A,
-
-
-
1 100
1 100 nA
3.5 4.0 m
V GS=10 V, I D=80 A,
SMD version
-
3.2 3.7
Rev. 1.0
page 2
2006-03-02


Features Datasheet pdf IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- H4 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • A utomotive AEC Q101 qualified • MSL1 u p to 260°C peak reflow • 175°C oper ating temperature • Green package (le ad free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version ) ID 40 3.7 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N04S2-H4 IPP80N 04S2-H4 IPI80N04S2-0H4 Package PG-TO26 3-3-2 PG-TO220-3-1 PG-TO262-3-1 Orderi ng Code SP0002-18165 SP0002-18169 SP000 2-18171 Marking 2N04H4 2N04H4 2N04H4 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuou s drain current1) www.DataSheet4U.com Symbol ID Conditions T C=25 °C, V GS= 10 V T C=100 °C, V GS=10 V2) Value 80 80 320 660 ±20 Unit A Pulsed drain current2) Avalanche energy, single puls e2) Gate source voltage4) Power dissipa tion Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C I.
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