Power-Transistor. IPB80N04S2L-03 Datasheet

IPB80N04S2L-03 Datasheet PDF


Part

IPB80N04S2L-03

Description

Power-Transistor

Manufacture

Infineon Technologies

Page 8 Pages
Datasheet
Download IPB80N04S2L-03 Datasheet


IPB80N04S2L-03 Datasheet
OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N04S2L-03
IPP80N04S2L-03
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
3.1 m
80 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB80N04S2L-03
IPP80N04S2L-03
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-20158 2N04L03
PG-TO220-3-1 SP0002-19063 2N04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
www.DataSheet4U.com
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
Power dissipation
Operating and storage temperature
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
I D,pulse T C=25 °C
E AS I D=80A
V GS
P tot T C=25 °C
T j, T stg
Value
80
80
320
810
±20
300
-55 ... +175
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-02

IPB80N04S2L-03 Datasheet
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
IPB80N04S2L-03
IPP80N04S2L-03
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=250 µA
40
1.2
Zero gate voltage drain current
www.DatGaSahteee-st4oUu.crocme leakage current
Drain-source on-state resistance
I DSS
I GSS
V DS=40 V, V GS=0 V,
T j=25 °C
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=80 A
-
-
-
-
-
1.6
0.01
1
1
3.6
-V
2.0
1 µA
100
100 nA
4.5 m
V GS=4.5 V, I D=80 A,
SMD version
-
3.3 4.2
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A
- 2.7 3.4 m
V GS=10 V, I D=80 A,
SMD version
-
2.4 3.1
Rev. 1.0
page 2
2006-03-02


Features Datasheet pdf IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS® Power-Transistor Features • N-channe l Logic Level - Enhancement mode • Au tomotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C opera ting temperature • Green package (lea d free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 40 3.1 80 V mΩ A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N04S2L-03 IPP80N04S2L-03 Pac kage PG-TO263-3-2 PG-TO220-3-1 Orderin g Code SP0002-20158 SP0002-19063 Marki ng 2N04L03 2N04L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) w ww.DataSheet4U.com Symbol ID Conditio ns T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 80 320 810 ±20 U nit A Pulsed drain current2) Avalanche energy, single pulse2) Gate source vol tage4) Power dissipation Operating and storage temperature I D,pulse E AS V G S P tot T j, T stg T C=25 °C I D=80A mJ V W °C T C=25 °C 300 -55 ... +175 Rev. 1.0 page 1 2006-03-02 IPB80N04S2L-03 I.
Keywords IPB80N04S2L-03, datasheet, pdf, Infineon Technologies, Power-Transistor, PB80N04S2L-03, B80N04S2L-03, 80N04S2L-03, IPB80N04S2L-0, IPB80N04S2L-, IPB80N04S2L, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)