IPB80N04S2L-03

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS® Power-Transistor Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 40 3.1 80 V mΩ A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N04S2L-03 IPP80N04S2L-03 Package PG-TO263-3-2 PG-TO220-3-1 Ordering Code SP0002-20158 SP0002-19063 Marking 2N04L03 2N04L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) www.DataSheet4U.com Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 80 320 810 ±20 Unit A Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=80A mJ V W °C T C=25 °C 300 -55 ... +175 Rev. 1.0 page 1 2006-03-02 IPB80N04S2L-03 IPP80N04S2L-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, ...