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IPB80N06S3L-08 Dataheets PDF



Part Number IPB80N06S3L-08
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPB80N06S3L-08 DatasheetIPB80N06S3L-08 Datasheet (PDF)

IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 2 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 7.6 80 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 Packa.

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IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 2 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 7.6 80 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-88128 SP0000-88131 SP0000-88127 Marking 3N06L08 3N06L08 3N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) www.DataSheet4U.com Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 61 320 170 55 ±16 Unit A Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C I D=40 A mJ V V W °C T C=25 °C 105 -55 ... +175 55/175/56 Rev. 1.0 page 1 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=55 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current www.DataSheet4U.com Values typ. max. Unit - - 1.4 62 62 40 K/W 55 1.2 - 1.7 0.01 2.2 1 V µA - 1 1 11.5 11.2 6.5 6.2 100 100 14.2 13.9 7.9 7.6 nA mΩ I GSS R DS(on) V GS=16 V, V DS=0 V V GS=5 V, I D=29 A V GS=5 V, I D=29 A, SMD version V GS=10 V, I D=43 A V GS=10 V, I D=43 A, SMD version Drain-source on-state resistance Rev. 1.0 page 2 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) www.DataSheet4U.com Diode pulse current 2) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=80 A, R G=3.5 Ω V GS=0 V, V DS=25 V, f =1 MHz - 6475 812 775 16 35 39 25 - pF ns Q gs Q gd Qg V plateau V DD=11 V, I D=80 A, V GS=0 to 10 V - 34 16 89 4.9 134 - nC V IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=27.5 V, I F=I S, di F/dt =100 A/µs 0.6 0.9 80 320 1.3 A Diode forward voltage V Reverse recovery time2) t rr - 45 - ns Reverse recovery charge2) 1) Q rr - 53 - nC Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 86 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. See diagrams 12 and 13. Qualified at -5V and +16V. 3) 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 1 Power dissipation P tot = f(T C); V GS ≥ 4 V 2 Drain current I D = f(T C); V GS ≥ 4 V 120 100 100 80 80 60 P tot [W] 60 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 40 20 0 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p www.DataSheet4U.com 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 limited by on-state resistance 10 µs 1 µs 100 0.5 100 1 ms 100 µs Z thJC [K/W] 0.1 I D [A] 10-1 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10 -3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 160 10 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS 16 140 120 14 5V 12 5V R DS(on) [mΩ] 100 I D [A] 80 60 40 20 0 0 1 2 3 4 5 6 4.5 V 10 6V 8 8V 4V 10 V 3.5 V 3V 6 4 0 50 100 150 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 4 V parameter: T j www.DataSheet4U.com 160 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V 13 140 11 120 100 -55 °C R DS(on) [mΩ] 6 25 °C 9 I D [A] 80 60 40 175 °C 7 5 20 0 0 1 2 3 4 5 3 -60 -20 20 60 100 140 180 V GS [V] T j [°C] Rev. 1.0 .


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