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Plastic-Encapsulated Transistors. 2SA1235A Datasheet

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Plastic-Encapsulated Transistors. 2SA1235A Datasheet
















2SA1235A Transistors. Datasheet pdf. Equivalent













Part

2SA1235A

Description

Plastic-Encapsulated Transistors



Feature


Transys Electronics L I M I T E D SOT-2 3-3L Plastic-Encapsulated Transistors 2 SA1235A FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (PNP) SOT-23-3L 1. BASE 2. EMITTER 3. COLLEC TOR 1. 02 Collector current -0.2 A ICM : Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temp erature range TJ, Tstg: -55℃ to +150 0. 025 0. 95¡ À 2. .
Manufacture

TRANSYS Electronics Limited

Datasheet
Download 2SA1235A Datasheet


TRANSYS Electronics Limited 2SA1235A

2SA1235A; 80¡ À 0. 05 1. 60¡ À0. 05 ELECTRICA L CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Symbo l V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector -emitter saturation voltage Base-emitte r voltage VCE(sat) VBE(sat) unless oth erwise specified) Test conditions MIN - 60 -50 -6 -0.1 -0.1 150 90 -0.3 -1 V V 500 MAX UNIT V V V Ic= .


TRANSYS Electronics Limited 2SA1235A

-100 µA, IE=0 Ic= -0.1 mA, IB=0 IE= -10 0µA, IC=0 VCB=-60 V , IE=0 VEB= -6V , IC=0 www.DataSheet4U.com Collector-emi tter breakdown voltage Emitter-base br eakdown voltage Collector cut-off curre nt Emitter cut-off current 0. 35 2. 9 2¡ À0. 05 1. 9 µA µA VCE=-6V, IC = -1mA VCE=-6V, IC= -0.1mA IC=-100 mA, IB= -10mA IC= -100mA, IB= -10mA Transi tion frequency fT VCE=.


TRANSYS Electronics Limited 2SA1235A

-6V, IC= -10mA 180 MHz CLASSIFICATION OF hFE(1) Marking Range M·E 150-300 M ·F 250-500 .





Part

2SA1235A

Description

Plastic-Encapsulated Transistors



Feature


Transys Electronics L I M I T E D SOT-2 3-3L Plastic-Encapsulated Transistors 2 SA1235A FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (PNP) SOT-23-3L 1. BASE 2. EMITTER 3. COLLEC TOR 1. 02 Collector current -0.2 A ICM : Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temp erature range TJ, Tstg: -55℃ to +150 0. 025 0. 95¡ À 2. .
Manufacture

TRANSYS Electronics Limited

Datasheet
Download 2SA1235A Datasheet




 2SA1235A
Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SA1235A TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 0.2 W (Tamb=25)
Collector current
ICM : -0.2
Collector-base voltage
A
V(BR)CBO : -60
V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
www.DataSheeCt4oUl.lceocmtor-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic= -100 µA, IE=0
Ic= -0.1 mA, IB=0
IE= -100µA, IC=0
VCB=-60 V , IE=0
VEB= -6V , IC=0
MIN
-60
-50
-6
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VCE=-6V, IC= -1mA
VCE=-6V, IC= -0.1mA
IC=-100 mA, IB= -10mA
IC= -100mA, IB= -10mA
150
90
MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
500
-0.3 V
-1 V
Transition frequency
fT
VCE=-6V, IC= -10mA
180
MHz
CLASSIFICATION OF hFE(1)
Marking
Range
M·E
150-300
M·F
250-500












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